| PART |
Description |
Maker |
| KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216000BK KMM53216000BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
| STI916100-60GOI STI916100-80TOH STI916100-70GPS ST |
16M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
16M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30 SIMM-30
16M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
|
KODENSHI, CORP.
3M Company
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http://
Infineon Technologies AG
SIEMENS AG
|
| KMM372V3280BS1 KMM372V3200BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| V54C3256164VBUS7PC V54C3256164VBUT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
